A novel hypergraph convolution network-based approach for predicting the material removal rate in chemical mechanical planarization

Effects of Surface Forces on Material Removal Rate in Chemical Mechanical Planarization

In chemical mechanical planarization, abrasive particles are pushed onto a wafer by a deformable pad. In addition to the pad–particle contact force, surface forces also act between the wafer and the particles. Experimental studies indicate the significance of slurry pH and particle size on the material removal rate MRR . In this work, a model for MRR, including the contact mechanics of multiple...

A scratch intersection model of material removal during Chemical Mechanical Planarization (CMP)

Fundamental Tribological and Removal Rate Studies of Inter-Layer Dielectric Chemical Mechanical Planarization

In this work, real-time coefficient of friction (COF) analysis, in conjunction with a new method for approximating the Sommerfeld Number, is used to determine the extent of normal and shear forces during chemical mechanical planarization (CMP) and to help identify the tribology of the system. A new parameter termed the ‘tribological mechanism indicator’ is defined and extracted from the resulti...

Laser Assisted Chemical Mechanical Polishing for Planarization

Modeling and Experimental Analysis of the Material Removal Rate in the Chemical Mechanical Planarization of Dielectric Films and Bare Silicon Wafers

An analytic model of the material removal rate is proposed for chemical mechanical planarization ~CMP!. The effects of the applied pressure and the polishing velocity between the wafer surface and the pad surface are derived considering the chemical reaction as well as the mechanical bear-and-shear process. The mechanism of microscopic material removal is presented. The material removal rate is...